ISO9001 Полупроводниковый оксид металла Fet Mosfet Транзистор многофункциональный
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:ISO9001 Metal Oxide Semiconductor Fet Mosfet, Multiscene Metal Oxide Semiconductor Fet Mosfet, Multi Function Metal Oxide Semiconductor Transistor
Low On Resistance High Power MOSFET Stable Process Reliable Quality Product Description: High Power MOSFET is a widely used device type that features high current, high power and high frequency. It is mainly used in different applications such as solar inverters, high-voltage DC/DC converters, motor... Посмотреть больше
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Промышленный сикарбид мосфета переключающая частота прочный теплостойкий
Цена: Confirm price based on product
MOQ: 600
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:Industrial Si Carbide Mosfet, Si Carbide Mosfet Durable, Heatproof Sic Mosfet Switching Frequency
High Frequency Silicon Carbide MOSFET Device for Industrial Applications Product Description: Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) are advanced power semiconductors which provide high power and high frequency capabilities for a variety of applications, i... Посмотреть больше
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Противо EMI суперсоединение мощности Мосфета, Практический N канал мощности Мосфета
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:Anti EMI Superjunction Power Mosfet, N Channel Superjunction Power Mosfet, Practical N Channel Power Mosfet
Ultra Small Package Superjunction Power MOSFET with Large EMI Margin Product Description: Super Junction MOSFETs - An Ultra Low Junction Capacitance and Ultra Small Internal Resistance Product Super Junction MOSFETs (SJ MOSFET) is a type of N-channel power MOSFETs with superior performance, mainly u... Посмотреть больше
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Силициевый шоттки барьерный ректификатор диод многофункциональный для промышленности
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:Silicon Schottky Barrier Rectifier Diode, Schottky Barrier Rectifier Diode Multifunctional, Industry Silicon Rectifier Diode
High Power SBD Silicon Carbide for Etc with Product Description: Silicon Carbide Schottky Barrier Diode (SBD) is a new type of power semiconductor device with high power, extremely low reverse recovery current, strong anti surge current ability, and high efficiency. It is mainly used in PFC circuit,... Посмотреть больше
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Термостойкий высоковольтный Сик Мосфет, многоцелевой N-канальный Фет-транзистор
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:Heatproof High Voltage Sic Mosfet, N Channel High Voltage Sic Mosfet, Multipurpose N Channel Fet Transistor
Product Description: High Voltage MOS-Gate Transistor, commonly known as High Voltage FET, is a type of semiconductor device designed for use in high voltage applications. This device has been gaining popularity due to its strong performance and wide range of applications. It offers excellent charac... Посмотреть больше
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High Efficiency Low Power Loss Low Voltage MOSFET Trench/SGT Process
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
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Зарядная куча высокопроизводительный IGBT транзистор многоцелевой для OBC
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:Charging Pile High Power IGBT, OBC High Power IGBT, Multipurpose IGBT Transistor
Product Description: High Power IGBT High Power Insulated Gate Bipolar Transistor (IGBT) is a high voltage device used in many applications, such as on-board chargers, welding machines, switching power supplies, photovoltaic inverters, energy storage, and more. With a current density of 400A/cm² and... Посмотреть больше
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Диод питания Шоттки Барьерный стабильный, MBR2045CT Сик Шоттки Ректификатор
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:Power Supply Diode Schottky BarrierPower Supply Diode Schottky Barrier, Diode Schottky Barrier Stable, MBR2045CT Sic Schottky Rectifier
Schottky Barrier Diode Device for Switching Power Supply with Low VF Product Description: Schottky Barrier Diodes are extremely efficient and reliable semiconductor devices that offer a low forward voltage drop and low leakage for a wide variety of applications. The devices feature a low forward vol... Посмотреть больше
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Автомобильное полупроводниковое устройство высокой мощности
Цена: Confirm price based on product
MOQ: 600 PCS
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:Electronic High Power Semiconductor, Automotive High Power Semiconductor
High Power Device Temperature Resistance For High-Temperature Environments Product Description: High Power Semiconductor High Power Semiconductor is a cutting-edge power electronic module that is designed to meet the high demands of modern technology. This product is built to the National Military S... Посмотреть больше
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Теплоустойчивый Сик Силиконовый полупроводник Противопоток Multiscene 1200V
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:Heatproof Silicon Semi Conductor, Silicon Semi Conductor Anti Surge, Multiscene Silicon Carbide SiC Power Semiconductors
Product Description: High Power Semiconductor is a powerful integrated circuit module designed for a variety of applications, such as solar inverters, high-voltage DC/DC converters, motor drivers, UPS, switching power supplies, and converters. It is renowned for its high power efficiency, low Rds(ON... Посмотреть больше
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