IGBT высокой мощности
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Зарядная куча высокопроизводительный IGBT транзистор многоцелевой для OBC
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:Charging Pile High Power IGBT, OBC High Power IGBT, Multipurpose IGBT Transistor
Product Description: High Power IGBT High Power Insulated Gate Bipolar Transistor (IGBT) is a high voltage device used in many applications, such as on-board chargers, welding machines, switching power supplies, photovoltaic inverters, energy storage, and more. With a current density of 400A/cm² and... Посмотреть больше
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Многофункциональный энерготранзистор и IGBT высокое напряжение 1200V 40A
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:Multifunctional Power Transistor And IGBT, Power Transistor And IGBT 1200V, 40A IGBT High Voltage
Product Description: High Power IGBT (Insulated Gate Bipolar Transistor) is a high power gate bipolar transistor with high current density, fast switching speed and high power capacity. It is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. H... Посмотреть больше
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Устойчивый зарядный столб сверхбыстрый IGBT, промышленный изолированный двери биполярный транзистор
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:Stable Ultra Fast IGBT, Charging Pile Ultra Fast IGBT, Industrial Insulated Gate Bipolar Transistor
Product Description: High Power IGBT is a type of high power bipolar transistor, specifically a type of insulated-gate bipolar transistor (IGBT). It is an advanced semiconductor device with an excellent combination of low conduction losses, high switching frequency, high reliability, and high curren... Посмотреть больше
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400A/Cm2 IGBT высокой мощности практичный для фотоэлектрического инвертора
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:400A/Cm2 High Power IGBT, High Power IGBT Practical, Photovoltaic Inverter HV IGBT
400A/c㎡ IGBT with Advantages Strictly Meeting Vehicle Specification Requirements Product Description: High Power IGBT is an advanced Gate Bipolar Transistor (IGBT) that provides high power, faster switching speed and higher current density. It is capable of handling high power applications like OBC,... Посмотреть больше
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60 кГц Практическая высокопроизводительная IGBT мультискене с быстрой скоростью переключения
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:60KHz High Power IGBT, Practical High Power IGBT, Multiscene IGBT High Power
High Power IGBT with Faster Switching Speed Product Description: High Power IGBT is an insulated gate bipolar power module with a narrow mesa design, providing more optimized groove combination design, higher reliability design and strictly referring to vehicle specification requirements. It has a h... Посмотреть больше
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Промышленный многоцелевой IGBT высокой мощности для сварочной машины
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:Industrial High Power IGBT, High Power IGBT Multipurpose, Welding Machine High Voltage IGBT
High Power IGBT 400A/c㎡ 60KHz for Industrial Applications Product Description: High Power IGBT is a kind of Insulated Gate Bipolar Power, High Power Bipolar Transistor and Insulated Gate Bipolar Transistor. It is designed with a Narrow Mesa Design, More Optimized Groove Combination Design, Higher Re... Посмотреть больше
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Прочный промышленный высокоточный IGBT, хранилище энергии изолированный транзистор
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:Durable High Current IGBT, Industrial High Current IGBT, Energy Storage Insulated Gate Transistor
High Reliability Design IGBT Device for Industrial Applications Product Description: High Power IGBT is a high power gate bipolar transistor, which is an ideal choice for applications with high current density and faster switching speed. It has a current density of 400A/c㎡ and a switching speed of 6... Посмотреть больше
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Инвертор IGBT высокочастотный стабильный 60KHz многосценический высокий ток
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:Inverter IGBT High Frequency, IGBT High Frequency Stable, Multiscene IGBT High Current
60KHz IGBT 400A/c㎡ Device for Application Insulated Gate Bipolar Transistor Product Description: High Power IGBT High Power IGBT is a kind of Insulated Gate Bipolar Transistor (IGBT) which is developed to provide high current density and power capacity. Its device type is IGBT. This type of IGBT can... Посмотреть больше
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650V 50A высокая мощность IGBT многофункциональная высокая скорость для хранения энергии
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:650V High Power IGBT, 50A High Power IGBT, Multifunctional High Speed IGBT
High Voltage IGBT with Faster Switching Speed and High Power Product Description: High Power IGBT is an insulated gate bipolar transistor (IGBT) inverter that provides higher power and switching speed than other IGBTs. It is designed with a narrow mesa design, more optimized groove combination desig... Посмотреть больше
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Практический 60 КГц высокочастотный IGBT, многофункциональный биполярный транзистор
Цена: Confirm price based on product
MOQ: Negotiable
Срок поставки: 2-30 days (Depends on Total Quantity)
Бренд: REASUNOS
Выделять:Practical High Frequency IGBT, 60KHz High Frequency IGBT, Multi Function Gate Bipolar Transistor
High Power IGBT Device for Industrial Applications Product Description: High Power Insulated Gate Bipolar Transistor (IGBT) is a type of power semiconductor device specifically designed to deliver high power output. It is ideal for applications requiring high voltage and high current density. It fea... Посмотреть больше
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