Полупроводники высокой мощности
(28)
Отличный портал зарядки N-канал супер соединения MOSFET 4A650V LCS65R900 высокомощный полупроводник
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Бренд: Lingxun
Excellent Gate Charge N Channel Super Junction MOSFET 4A650V LCS65R900 High Power Semiconductor Id:4A Vdss:650V Rdson-typ(@Vgs=10V):840mΩ Features: • High Dense Super Junction Design • Excellent Gate Charge x RDS(ON) Product(FOM) • Ultra Low On-Resistance • Reliable and Rugged Applications: • SMPS Q... Посмотреть больше
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11A 650V 340mΩ TO-252 MOSFET высокой мощности для переключения заряда
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MOQ: According to your order requirement
Срок поставки: According to your order requirement
Бренд: Lingxun
Выделять:TO-252 High Power MOSFET, Switching Charger High Power MOSFET, 650V High Power MOSFET
11A 650V 340mΩ TO-252 High Power MOSFET For Switching Charger N-channel Super Junction MOSFET Part No.:LC65R380D Package:TO-252 MAIN CHARACTERISTICS ID:11A VDSS:650V RDSON-typ VGS=10V:340mΩ FEATURES • Adopt advanced trench technology to provide excellent RDS(ON), low gate charge and operation with g... Посмотреть больше
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TO-220F Транзисторы с эффектом поля полупроводников оксида металла 15A 600V 274mΩ
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MOQ: According to your order requirement
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Бренд: Lingxun
Выделять:Metal Oxide Semiconductor Field Effect Transistors, TO-220F Metal Oxide Semiconductor, Field Effect Transistors 15A
15A 600V 274mΩ TO-220F Metal-Oxide-Semiconductor Field-Effect Transistors N-channel Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conducti... Посмотреть больше
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Высоковольтный полупроводник высокой мощности типа N с низкой утечкой
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MOQ: According to your order requirement
Срок поставки: According to your order requirement
Бренд: Lingxun
Выделять:N Type High Power Semiconductor, Low Leakage High Power Semiconductor, N Type High Voltage Semiconductor
Product Description: Temperature Resistance Voltage Low Junction Capacitance Low Leakage N Power Semiconductor With low leakage and low junction capacitance, this N-type semiconductor is optimized for high voltage applications. Its ability to handle high voltages and currents makes it ideal for use ... Посмотреть больше
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Полупроводники высокой мощности с низким переключением 15A 650V 238mΩ для преобразователей постоянного тока
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MOQ: According to your order requirement
Срок поставки: According to your order requirement
Бренд: Lingxun
Выделять:Low Switching High Power Semiconductor, High Power Semiconductor 15A, High Power Semiconductor 650V
15A 650V 238mΩ Low Switching High Power Semiconductor For DC-DC Converters N-channel Super Junction MOSFET Part No.:LC65R280D Package:TO-252 MAIN CHARACTERISTICS ID:15A VDSS:650V RDSON-typ VGS=10V:238mΩ FEATURES • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conducti... Посмотреть больше
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19А 600В 160мΩ Полупроводник высокой мощности для промышленных источников питания
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MOQ: According to your order requirement
Срок поставки: According to your order requirement
Бренд: Lingxun
Выделять:600V High Power Semiconductor, 19A High Power Semiconductor, 160mΩ High Power Semiconductor
19A 600V 160mΩ Reduced Switching High Power Semiconductor For Industrial Power Supplies N-channel Super Junction MOSFET Part No.:LC60R190D Package:TO-220F MAIN CHARACTERISTICS ID:19A VDSS:600V RDSON-typ VGS=10V:160mΩ FEATURES • Reduced Switching & Conduction Losses • Fast Recovery Body-Diode • L... Посмотреть больше
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20A 650V 150mΩ Холодный MOS для источников питания с переключенным режимом
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MOQ: According to your order requirement
Срок поставки: According to your order requirement
Бренд: Lingxun
Выделять:20A Cool MOS, Switched Power Supplies Cool MOS, 650V High Voltage MOS
20A 650V 150mΩ Stability And Uniformity Cool MOS For Switched Mode Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON-typ VGS=10V:150mΩ FEATURES • Low RDS(on) & FM • Extremely low switching loss • Excellent stability and ... Посмотреть больше
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TO-252 Поверхностная установка Полупроводник высокой мощности 5А 500В 1.33Ω Для сушилки волос
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MOQ: According to your order requirement
Срок поставки: According to your order requirement
Бренд: Lingxun
Выделять:Surface Mount High Power Semiconductor, TO-252 High Power Semiconductor, 500V High Power Semiconductor
5A 500V 1.33Ω TO-252 Surface Mount High Power Semiconductor For Hairdryer N-Channel Enhancement Mode Power MOSFET Part No.:CS5N50A5 Package:TO-252 MAIN CHARACTERISTICS ID:5A VDSS:500V RDSON-typ VGS=10V: 1.33Ω FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanc... Посмотреть больше
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Многоразовое применение высокомощный полупроводник N канал
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Бренд: Lingxun
Multi-occasion application High Power Semiconductor N Channel Features • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS • Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-DC Power... Посмотреть больше
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Низкая утечка N канал высокомощный MOSFET TO-220F TO-263C TO-247AC
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MOQ: According to your order requirement
Срок поставки: According to your order requirement
Бренд: Lingxun
Выделять:N Channel High Power MOS, High Power MOSFET TO-247AC, TO-263C High Power MOSFET
Product Description: Voltage Low Leakage Power MOSFET The N type High Power Semiconductor is a type of semiconductor that features low leakage and high-temperature resistance. Its ability to resist high temperatures makes it suitable for use in harsh environments. The device is designed to handle hi... Посмотреть больше
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Низкая утечка N-канал высокомощный IGBT для промышленных применений
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MOQ: According to your order requirement
Срок поставки: According to your order requirement
Бренд: Lingxun
Выделять:N High Power IGBT, Industrial High Power IGBT, Industrial N Channel IGBT
Product Description: Low Leakage Voltage Power IGBT For Industrial Applications High voltage power IGBT, High voltage power cool mos, and high voltage discrete devices are some of the key attributes of this product. Its ability to handle high voltages and currents efficiently, with rapid switching c... Посмотреть больше
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N-канал высокопроизводительные полупроводники с низкой пропускной способностью и низкой пропускной способностью
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MOQ: According to your order requirement
Срок поставки: According to your order requirement
Бренд: Lingxun
Выделять:N Channel High Power Semiconductors, Low Leakage High Power Semiconductors, Low Junction Capacitance Power Semiconductors
Product Description:N Channel Voltage Low Leakage Low Junction Capacitance High Temperature Resistance Power SemiconductorOur High Power Semiconductor product is of type N, which is known for its robustness and durability. With its low junction capacitance, it can help reduce power losses and enhanc... Посмотреть больше
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Высоковольтный низкопроницаемый полупроводник для зарядки
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MOQ: According to your order requirement
Срок поставки: According to your order requirement
Бренд: Lingxun
Выделять:Cool Mos Semiconductor, Low Leakage Cool Mos, Charging Pile Cool Mos
Product Description: Voltage Low Leakage Cool Mos The Semiconductor For Power Applications This particular product is a Type N semiconductor with low junction capacitance, making it ideal for high voltage applications. Its high efficiency ensures that it can handle large amounts of current without w... Посмотреть больше
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Высокая мощность низкая утечка N канал IGBT высокотемпературный устойчивый
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MOQ: According to your order requirement
Срок поставки: According to your order requirement
Бренд: Lingxun
Выделять:Low Leakage N Channel IGBT, High Temperature Resistant N Channel IGBT, N Type High Power IGBT
Product Description: Power High Temperature Resistant Low Leakage N Channel IGBT Our High Voltage Power Semiconductors are capable of handling high voltages and currents efficiently, making them ideal for various industries such as power generation, distribution, transportation, and consumer electro... Посмотреть больше
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TO-247 N канал высокомощный полупроводник для зарядки
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MOQ: According to your order requirement
Срок поставки: According to your order requirement
Бренд: Lingxun
Выделять:TO-247 High Power Semiconductor, Charging Pile High Power Semiconductor, N Channel Power Semiconductor
Product Description:N Type High Temperature Resistance Low Leakage Low Junction Capacitance Power SemiconductorDesigned with a low junction capacitance, this semiconductor is ideal for high-frequency applications that require fast switching speeds. Its low leakage feature ensures minimal power loss,... Посмотреть больше
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Транзистор высокого напряжения типа N TO-220F с низкой емкостью соединения
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MOQ: According to your order requirement
Срок поставки: According to your order requirement
Бренд: Lingxun
Выделять:N Type High Voltage Transistor, Low Junction Capacitance N Type Transistor, High Voltage Transistor TO-220F
Product Description: Power N Type Low Junction Capacitance Transistor One of the unique features of this semiconductor is its low junction capacitance. This attribute ensures that there is minimal power loss when the semiconductor is switched on and off. It also makes it ideal for use in high-freque... Посмотреть больше
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N-канальный высокомощный полупроводник TO-220F с высокой температурной стойкостью
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MOQ: According to your order requirement
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Бренд: Lingxun
Выделять:High Power Semiconductor TO-220F, Heat Resistance High Power Semiconductor, N Channel High Power Semiconductor
Product Description: N Type Low Leakage Low Capacitance High Temperature Resistance Semiconductor High Voltage Power Semiconductors are characterized by their ability to handle high voltages and currents efficiently, with robust thermal management. This semiconductor is no exception, and its high vo... Посмотреть больше
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N-канальный высоковольтный полупроводник с низкой пропускной способностью
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Бренд: Lingxun
Выделять:N Channel High Voltage Semiconductor, Low Leakage High Voltage Semiconductor, Low Junction Capacitance Power Semiconductor
Product Description: Voltage Low Leakage Junction Capacitance High Temperature Resistance Semiconductor Bolstering Technology The High-temperature Resistance feature ensures that the product functions optimally in high-temperature environments without compromising on performance. It is perfect for a... Посмотреть больше
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Мощность MOSFET с высокой температурной стойкостью, низкой утечкой и низкой емкостью соединения
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Бренд: Lingxun
Product Description: High Efficiency is a crucial attribute for high-power electronic systems, and our product is designed to deliver it. It ensures that the system operates optimally, with minimal energy loss, which translates to reduced energy costs. The product's high efficiency makes it an ideal... Посмотреть больше
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Низкая утечка Низкая соединительная емкость Высокая температура Сопротивление напряжение N канал Силовой полупроводник
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Бренд: Lingxun
Product Description: Our High Voltage Power Semiconductors are characterized by their High Light, Rapid Switching Capabilities, and Robust Thermal Management. They are built to withstand extreme conditions, making them ideal for use in demanding environments that require High-temperature Resistance.... Посмотреть больше
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