Флэш-память IC
(362)
Поверхностный обломок 64Kbit флэш-памяти держателя, CAT28C64BG-12T внезапный IC EEPROM
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: onsemi
Выделять:Surface Mount Flash Memory Chip, Flash Memory Chip 64Kbit, CAT28C64BG-12T Flash IC EEPROM
CAT28C64BG-12T IC EEPROM 64KBIT PARALLEL 32PLCC onsemi Product Details DESCRIPTION The CAT28C64B is a fast, low power, 5V-only CMOS Parallel EEPROM organized as 8K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto-c... Посмотреть больше
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DS3065W-100# IC NVSRAM 8 МБИТ ПАРАЛЛЕЛЬНО 256BGA Analog Devices Inc./Maxim Integrated
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: Analog Devices Inc./Maxim Integrated
Product Details Based on more than 30 years of ceramic and ferrite technology experience, Murata Electronics’ full range of leaded EMI filters have been designed to meet today’s electronic industry requirements. Murata’s leaded devices consist of ferrite bead inductors, feed-thru capacitors, 3 termi... Посмотреть больше
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MR4A16BYS35 IC RAM 16 МБИТ ПАРАЛЛЕЛЬНО 54TSOP2 Everspin Technologies Inc.
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: Everspin Technologies Inc.
Product Details MR3 Reflector Lamp Assemblies MR4 Reflector Lamp Assemblies MR6 Reflector Lamp Assemblies Adjustable Focus Reflector Assemblies Specifications Attribute Attribute Value Manufacturer Everspin Product Category Memory ICs Series MR4A16B Packaging Tray Alternate Packaging Mounting-Style ... Посмотреть больше
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M29F800FB5AN6E2 IC FLASH, 8 МБИТ, ПАРАЛЛЕЛЬНО, 48TSOP I Alliance Memory, Inc.
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: Alliance Memory, Inc.
Product Details General Description This description applies specifically to the M29F 16Mb (2 Meg x 8 or 1 Meg x 16) nonvolatile memory device, but also applies to lower densities. The device enables READ, ERASE, and PROGRAM operations using a single, low-voltage (4.5–5.5V) supply. On power-up, the ... Посмотреть больше
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R1LV1616RSD-7SI#B0 IC SRAM 16MBIT PAR 52TSOP II Renesas Electronics America Inc.
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: Renesas Electronics America Inc
Specifications Attribute Attribute Value Manufacturer Renesas Electronics America Product Category Memory ICs Series - Packaging Tray Package-Case 52-TFSOP (0.350", 8.89mm Width) Operating-Temperature -40°C ~ 85°C (TA) Interface Parallel Voltage-Supply 2.7 V ~ 3.6 V Supplier-Device-Package 52-T... Посмотреть больше
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MTFC32GAPALNA-AAT IC FLASH 256 ГБИТ MMC 100 ТБГА Micron Technology Inc.
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: Micron Technology Inc.
Specifications Attribute Attribute Value Manufacturer Micron Technology Inc. Product Category Resonators Mfr Micron Technology Inc． Series e•MMC™ Package Tray Product-Status Last Time Buy Memory-Type Non-Volatile Memory-Format FLASH Technology FLASH - NAND Memory-Size 256Gb (32G x 8) Memory-Interfac... Посмотреть больше
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MTFC16GJUEF-AIT TR IC FLASH 128 ГБИТ MMC 169TFBGA Micron Technology Inc.
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: Micron Technology Inc.
Product Details [Jauch Quartz GmbH] Tuning Fork Quartz Crystal Features ■ three different package versions ■ surface mount version available Specifications Attribute Attribute Value Manufacturer Micron Technology Inc. Product Category Memory ICs Series e‧MMC Packaging Tape & Reel (TR) Package-Ca... Посмотреть больше
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IS61WV5128BLL-10BLI IC SRAM 4MBIT PARALLEL 36TFBGA ISSI, Integrated Silicon Solution Inc.
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: ISSI, Integrated Silicon Solution Inc
Product Details DESCRIPTION TheISSIIS61WV102416ALL/BLL and IS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields hi... Посмотреть больше
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IS62WV102416EBLL-45BLI IC SRAM 16MBIT PARALLEL 48VFBGA ISSI, Integrated Silicon Solution Inc.
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: ISSI, Integrated Silicon Solution Inc
Product Details DESCRIPTION TheISSIIS62WV102416ALL/BLL and IS65WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated usingISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields hi... Посмотреть больше
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IS63WV1024BLL-12TLI IC SRAM 1MBIT PARALLEL 32TSOP II ISSI, Integrated Silicon Solution Inc.
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: ISSI, Integrated Silicon Solution Inc
Product Details DESCRIPTION The ICSI IS63LV1024 is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, y... Посмотреть больше
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IS61C3216AL-12KLI-TR IC SRAM 512KBIT PARALLEL 44SOJ ISSI, Integrated Silicon Solution Inc.
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: ISSI, Integrated Silicon Solution Inc
Product Details DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 n... Посмотреть больше
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IS43R32400E-5BL-TR IC DRAM 128MBIT PAR 144LFBGA ISSI, Integrated Silicon Solution Inc.
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: ISSI, Integrated Silicon Solution Inc
Product Details FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 933 MHz ● 8 internal banks for concurrent operation ● 8n-bit pre-fetch architec... Посмотреть больше
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AT25128T2-10TI-1.8 IC EEPROM 128KBIT SPI 20TSSOP Технология микрочипов
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: Microchip Technology
Product Details Description The AT25128 provides 131,072 bits of serial electrically erasable programmable read only memory (EEPROM) organized as 16,384 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low power and low voltage operation are ... Посмотреть больше
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IDT70T3319S133DD IC SRAM 4.5MBIT PARALLEL 144TQFP Renesas Electronics America Inc.
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: Renesas Electronics America Inc
Product Details Description The IDT70T651/9 is a high-speed 256/128K x 36 Asynchronous Dual-Port Static RAM. The IDT70T651/9 is designed to be used as a stand-alone 9216/4608K-bit Dual-Port RAM or as a combination MAS TER/SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE... Посмотреть больше
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AT26DF161A-MU IC FLASH 16 Мбит SPI 70 МГц 8VDFN Renesas Design Germany GmbH
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: Renesas Design Germany GmbH
Product Details Description The AT26DF161A is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the A... Посмотреть больше
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BQ4010MA-85 IC NVSRAM 64KBIT PARALLEL 28DIP Техасские инструменты
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: Texas Instruments
Product Details Description/ FeaturesThe 10BQ040 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery chargi... Посмотреть больше
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AS4C4M32S-7BCN IC DRAM 128MBIT PAR 90TFBGA Альянс памяти, Inc.
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: Alliance Memory, Inc.
Specifications Attribute Attribute Value Manufacturer Alliance Memory, Inc. Product Category Memory ICs Series - Packaging Tray Alternate Packaging Package-Case 90-LFBGA Operating-Temperature 0°C ~ 70°C (TA) Interface Parallel Voltage-Supply 3 V ~ 3.6 V Supplier-Device-Package 90-TFBGA (8x13) Memory... Посмотреть больше
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R1EX25008ATA00I#S0 IC EEPROM 8KBIT SPI 5MHZ 8TSSOP Renesas Electronics America Inc.
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: Renesas Electronics America Inc
Product Details FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mounted applications ♦ Super fast switching for high efficiency ♦ Low reverse leakage ♦ Built-in strain relief,ideal for automated placement ♦ High forward surge current cap... Посмотреть больше
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M95160-RMB6TG IC EEPROM 16 КБИТ SPI 8UFDFPN STMicroelectronics
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: STMicroelectronics
Product Details SUMMARY DESCRIPTIONThese electrically erasable programmable memory (EEPROM) devices are accessed by a high speed SPI-compatible bus. The memory array is organized as 2048 x 8 bit (M95160), and 1024 x 8 bit (M95080). FEATURES SUMMARY■ Compatible with SPI Bus Serial Interface (Positive... Посмотреть больше
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71V546S100PFG IC SRAM 4.5MBIT PAR 100TQFP Renesas Electronics America Inc.
Цена: Based on current price
MOQ: 1
Срок поставки: 3-5 work days
Бренд: Renesas Electronics America Inc
Product Details DESCRIPTION: The IDT71V509 is a 3.3V high-speed 1,024,576-bit synchronous SRAM organized as 128K x 8. It is designed to eliminate dead cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBT, or Zero Bus Turnaround™. FEA... Посмотреть больше
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