...
>
AT9S PRO 10/12 Channels 2.4GHz RC Radio Transmitter and Receiver R9DS Remote Controller for Fpv Racing Drone
Цена: Negotiable
MOQ: 1
Срок поставки: 3~5 days
Бренд: Radiolink
AT9S PRO 10/12 Channels 2.4GHz RC Radio Transmitter and Receiver R9DS Remote Controller for Fpv Racing Drone AT9S Pro Transmitters Specifications Dimension 183*100*193mm(7.2"*3.9"*7.6") Battery Case Dimension 116*36*32mm(L*W*H=4.57"*1.42"*1.26") Weight 0.88kg Frequencie... Посмотреть больше
➤ Посещать Интернет сайт
Newest Product At10II 12 Channels RC Transmitter Radio Remote Controller for Bait Boat Quadcopter
Цена: Negotiable
MOQ: 1
Срок поставки: 1~3 working days
Бренд: Radiolink
Newest Product At10II 12 Channels RC Transmitter Radio Remote Controller for Bait Boat Quadcopter AT10II Transmitters Specifications Product Name AT10 II 12 Channel Radio Dimension 180*95*220mm (7.1"* 3.7"* 8.7") Battery Case Dimension 115*32*30.5mm(L*W*H=4.53"*1.26"*1.2&quo... Посмотреть больше
➤ Посещать Интернет сайт
2mm 2.38mm 2.5mm 3mm 4mm 5mm 6mm G5 Si3n4 Silicon Carbide Bearing Ball Sic Ceramic Balls
Цена: Depends on quantity
MOQ: 100PCS
Срок поставки: 8~10 working days
Бренд: ANG
2mm 2.38mm 2.5mm 3mm 4mm 5mm 6mm G5 G10 Si3N4 Silicon Carbide Bearing Ball Sic Ceramic Balls Advantages of silicon nitride ceramic ball: 1, high hardness. The Vickers hardness of ordinary Gcr15 bearing steel is 800HV, while the hardness of silicon nitride ceramic ball is more than 1700HV. 2, high we... Посмотреть больше
➤ Посещать Интернет сайт
12.7mm 13mm 14mm 15.875mm 17.462mm 19mm High Precision G5 G10 Silicon Nitride Ceramic Bearing Ball Si3n4 Sic Ball
Цена: Depends on size and quantity
MOQ: 100
Срок поставки: 8~10 working days
Бренд: ANG
12.7mm 13mm 14mm 15.875mm 17.462mm 19mm High Precision G5 G10 Silicon Nitride Ceramic Bearing Ball Si3n4 Sic Ball Advantages of silicon nitride ceramic ball: 1, high hardness. The Vickers hardness of ordinary Gcr15 bearing steel is 800HV, while the hardness of silicon nitride ceramic ball is more th... Посмотреть больше
➤ Посещать Интернет сайт
99% High Purity Silicon Carbide Beads Sic Ceramic Grinding Ball for Bearing Sic Ball
Цена: Depends on size and quantity
MOQ: 500
Срок поставки: 8~10 working days
Бренд: ANG
99% High Purity Silicon Carbide Beads Sic Ceramic Grinding Ball for Bearing Sic Ball Silicon carbide (SiC) is a lightweight ceramic material with high strength properties comparable to diamond. It has excellent thermal conductivity, low thermal expansion, and is resistant to corrosion from acids. Si... Посмотреть больше
➤ Посещать Интернет сайт
95% Purity Zirconia Ceramic Beads Zro2 Ceramic Ball Zirconium Oxide Ball for Grinding Beads
Цена: Depends on size and quantity
MOQ: 500
Срок поставки: 8~10 working days
Бренд: ANG
95% Purity Zirconia Ceramic Beads Zro2 Ceramic Ball Zirconium Oxide Ball for Grinding Beads Advantages: 1. High density ≥ 6.02g/cm3 2. Very high wear and tear resistance; 3. Highest operating time is achievable; 4. Low contamination of the grinding product, therefore useable for high-grade grinding ... Посмотреть больше
➤ Посещать Интернет сайт
4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
Цена: Depends on size and quantity
MOQ: 100
Срок поставки: 8~10 working days
Бренд: ANG
4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device Regarding Silicon Carbide(SiC) Crystal Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at hig... Посмотреть больше
➤ Посещать Интернет сайт
Soi Wafer Silicon on Insulator Semiconductor Wafer
Цена: Depends on size and quantity
MOQ: 100
Срок поставки: 8~10 working days
Бренд: ANG
Soi Wafer Silicon on Insulator Semiconductor Wafer SOI Wafer (Silicon On Insulator) * SOI Wafer sizes from 3" to 200mm, some in inventory * Very high quality with tight TTV on device layer thickness * Direct Si-Si bonding and double sided SOI available * Any Si orientation, any device thickness... Посмотреть больше
➤ Посещать Интернет сайт
6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
Цена: Depend on size and quantity
MOQ: 100
Срок поставки: 8~10 working days
Бренд: ANG
6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer SiC(Silicon Carbide) Wafer Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate... Посмотреть больше
➤ Посещать Интернет сайт